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Integrated Microelectronic Devices: Physics and Modeling, 1st edition

Published by Pearson (January 20, 2017) © 2018

  • J A. del Alamo
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For advanced courses in Semiconductor Devices

A modern take on microelectronic device engineering

Microelectronics is a 50-year-old engineering discipline still undergoing rapid evolution and societal adoption. Integrated Microelectronic Devices: Physics and Modeling fills the need for a rigorous description of semiconductor device physics that is relevant to modern nanoelectronics. The central goal is to present the fundamentals of semiconductor device operation with relevance to modern integrated microelectronics. Emphasis is devoted to frequency response, layout, geometrical effects, parasitic issues and modeling in integrated microelectronics devices (transistors and diodes). In addition to this focus, the concepts learned here are highly applicable in other device contexts.

This text is suitable for a one-semester junior or senior-level course by selecting the front sections of selected chapters (e.g. 1-9). It can also be used in a two-semester senior-level or a graduate-level course by taking advantage of the more advanced sections.

Preface xv

 

About the Author xix

 

1 Electrons, Photons, and Phonons

 

1.1 Selected Concepts of Quantum Mechanics

 

1.1.1 The dual nature of the photon

 

1.1.2 The dual nature of the electron

 

1.1.3 Electrons in confined environments

 

1.2 Selected Concepts of Statistical Mechanics

 

1.2.1 Thermal motion and thermal energy

 

1.2.2 Thermal equilibrium

 

1.2.3 Electron statistics

 

1.3 Selected Concepts of Solid-State Physics

 

1.3.1 Bonds and bands

 

1.3.2 Metals, insulators, and semiconductors

 

1.3.3 Density of states

 

1.3.4 Lattice vibrations: phonons

 

1.4 Summary

 

1.5 Further reading

 

Problems

 

2 Carrier Statistics in Equilibrium

 

2.1 Conduction and Valence Bands; Bandgap; Holes

 

2.2 Intrinsic Semiconductor

 

2.3 Extrinsic Semiconductor

 

2.3.1 Donors and acceptors

 

2.3.2 Charge neutrality

 

2.3.3 Equilibrium carrier concentration in a doped semiconductor

 

2.4 Carrier Statistics in Equilibrium

 

2.4.1 Conduction and valence band density of states

 

2.4.2 Equilibrium electron concentration

 

2.4.3 Equilibrium hole concentration

 

2.4.4 np product in equilibrium

 

2.4.5 Location of Fermi level

 

2.5 Summary

 

2.6 Further Reading

 

Problems

 

3 Carrier Generation and Recombination

 

3.1 Generation and Recombination Mechanisms

 

3.2 Thermal Equilibrium: Principle of Detailed Balance

 

3.3 Generation and Recombination Rates in Thermal Equilibrium

 

3.3.1 Band-to-band optical generation and recombination

 

3.3.2 Auger generation and recombination

 

3.3.3 Trap-assisted thermal generation

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